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張彥華老師的論文著述 一、學術期刊論文 - 張彥華, 2020, Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate, Solid State Electronics Letters, Vol.2, pp.92-97. (其他)
- 張彥華, 2014, Analysis of tunable transmission properties in photonic crystals containing doped semiconductor, Optics Communications, Vol.321, pp.167-171. (SCI)
- 張彥華, 2013, Effect of Ta thickness on the perpendicular magnetic anisotropy in MgO/CoFeB/Ta/ [Co/Pd]n structures, Journal of Applied Physics, Vol.114, No.18, pp.184303. (SCI)
- 張彥華, 2013, Perpendicular magnetic tunnel junctions with synthetic antiferromagnetic pinned layers based on [Co/Pd] multilayers, Journal of Applied Physics, Vol.113, No.17, pp.17B909. (SCI)
- 張彥華, 2012, Electrical and Physical Properties of HfO2 as Gate Dielectrics Using Various Thickness of TaN Electrodes for MIS capacitors, Microelectronic Engineering, Vol.96, pp.61–66. (SCI)
- 張彥華, 2012, A Collector Current Model for InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors with Non-ideal Effects, Microelectronics Reliability, Vol.52, No.7, pp.1328–1331. (SCI)
- 張彥華, 2012, Temperature and bias dependences of defect mode in a photonic crystal containing a photonic-quantum-well defect, Journal of Optoelectronics and Advanced Materials, Vol.14, No.3, pp.185-192. (SCI)
- 張彥華, 2012, Temperature dependence of defect mode in a defective photonic crystal, Optics Communications, Vol.285, No.6, pp.1501-1504. (SCI)
- 張彥華, 2011, Improving an LDMOST by Variation of Lateral Doping on Epitaxial-Layer Drift Region, Microelectronics Reliability, Vol.51, No.12, pp.2059-2063. (SCI)
- 張彥華, 2011, A Self-Consistent Extraction Procedure for Source/Drain Resistance in MOSFETs, Microelectronics Reliability, Vol.51, No.12, pp.2049-2052. (SCI)
- 張彥華, 2011, DC parameter extraction of equivalent circuit model in InGaAsSb heterojunction bipolar transistors including non-ideal effects in the base region, Solid-State Electronics, Vol.61, No.1, pp.69-75. (SCI)
- 張彥華, 2011, Tunable multilayer narrowband filter containing an ultrathin metallic film and a lithium niobate defect, Optical and Quantum Electronics, Vol.42, No.6-7, pp.359-365. (SCI)
- 張彥華, 2011, Reflection and transmission in a heterostructured multilayer narrowband filter containing thin metallic films, Journal of Optoelectronics and Advanced Materials, Vol.13, No.3, pp.268-272. (SCI)
- 張彥華, 2010, Use of Photonic Quantum Well as Tunable Defect in Multilayer, OPTICAL REVIEW, Vol.17, No.5, pp.495-498. (SCI)
- 張彥華, 2010, Optimization of High Voltage LDMOSFETs with Complex Multiple-Resistivity Drift Region and Field Plate, Microelectronics Reliability, Vol.50, No.7, pp.949-953. (SCI, EI)
- 張彥華, 2010, Extraction of VBIC Model Parameters for InGaAsSb DHBTs, Microelectronics Reliability, Vol.50, No.3, pp.370-375. (SCI, EI)
- 張彥華, 2010, Extraction of bias-dependent parasitic source/drain resistance in MOSFETs with an advanced mobility model, Microelectronics Reliability, Vol.50, No.2, pp.174-178. (SCI, EI)
- 張彥華, 2010, REFRACTOMETRIC OPTICAL SENSING BY USING A MULTILAYER REFLECTION AND TRANSMISSION NARROWBAND FILTER, Journal of Electromagnetic Waves and Applications (JEMWA), Vol.24, No.2/3, pp.293-305. (SCI)
- 張彥華, 2010, Simulation of electrical characteristics of InP double-heterojunction bipolar transistors with InGaAsSb base, Microelectronics Reliability, Vol.50, No.1, pp.70-74. (SCI, EI)
- 張彥華, 2009, Narrowband filter in a heterostructured multilayer containing ultrathin metallic films, Progress in Electromagnetics Research, Vol.96, pp.329-349. (SCI, EI)
- 張彥華, 2009, Angular dependence of a narrowband reflection-and-transmission filter containing an ultrathin metallic film, Journal of the Optical Society of America, B, Vol.26, No.5, pp.1141-1145. (SCI, EI)
- 張彥華, 2007, Perpendicular magnetic tunneling junction with double barrier layers for MRAM application, IEEE Transaction on Magnetics, Vol.43, No.2. (SCI, EI)
- Yang-Hua Chang*, Hui-Feng Hsu, 2006, Determination of Thermal Resistance Using Gummel Measurement for InGaP/GaAs HBTs, Microelectronics Reliability, Vol.46, No.12, pp.2074-2078. (SCI, EI)
- C.S. Ho*, Y.C. Lo, Yang-Hua Chang and Juin J. Liou, 2006, Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices, Solid State Electronics, Vol.50, No.11, pp.1774-1779. (SCI)
- Yang-Hua Chang, Zhi-Juan Chang, and Yi-Jing Hsieh,, 2005, Substrate Leakage Current in InGaP/GaAs Heterojunction Bipolar Transistors, Japanese Journal of Applied Physics, Vol. 44, No. 4B, pp.2450-2453. (SCI)
- Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, and Chi-Chung Liu,, 2003, Design of Multi-finger HBTs with a Thermal-Electrical Model, Microelectronics Reliability, Vol. 43, No. 3, pp. 421-426. (SCI)
- Yang-Hua Chang, 1994, Recombination Components of Base Current in AlGaAs/GaAs Heterojunction Bipolar Transistors, Journal of Yunlin Institute of Technology.
- Yang-Hua Chang, 1994, Cascaded Collector Current formulations of Abrupt Heterojunction Bipolar Transistors and their Applications to Graded HBT, Solid-State Electronics. (SCI)
- Yang-Hua Chang and G. P. Li, 1993, Resolving Degradation Mechanisms in Ultra-High Performance N-p-n Heterojunction Bipolar Transistors, IEEE Transactions on Electron Devices, Vol. 40, No. 4. (SCI)
二、研討會論文- 王焌至, 張彥華, 2019, Improving Off-State Breakdown Voltage for a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate, The 2019 International Electron Devices & Materials Symposium, 2019/10/24-25, 台灣電子材料與元件協會、長庚大學, 新北市林口.
- 張彥華, 黃懷諄, 2018, Increasing the Breakdown Voltage for AlGaN/GaN HEMTs with Slant and Conventional Gate Field Plates, International Electron Devices and Materials Symposium (IEDMS) 2018, 2018/11/14-16, 海洋大學, 基隆.
- 張彥華, 鄭宇傑, 2018, Improving breakdown voltage of double-channel AlGaN/GaN HEMTs with double-gate and gate-field-plate structures, International Electron Devices and Materials Symposium (IEDMS) 2018, 2018/11/14-16, 海洋大學, 基隆.
- 張彥華, 楊旅皓, 2017, Double-Channel E-Mode AlGaN/GaN HEMTs with an Electron-Blocking Layer Structure, The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), 2017/10/18-20, 清華大學, 新竹.
- 張彥華, 王建閔, 2017, Improving Breakdown Voltage of Double-Channel E-Mode AlGaN/GaN HEMTs Using a Double-Gate Structure, The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), 2017/10/18-20, 清華大學, 新竹.
- 張彥華, 王致乾, 2017, The Effects of Unintentional Doping Concentration and Polarization Charges on AlInN/GaN High Electron Mobility Transistors, International Electron Devices and Materials Symposium (IEDMS) 2017, 2017/09/06-08, 交通大學, 新竹.
- 張彥華, 2014, Optimizing the Transconductance in AlGaN/GaN Double-Channel HEMTs, International Electron Devices and Materials Symposium (IEDMS), 2014/11/20-21, 東華大學, 花蓮. (102-1111)
- 張彥華, 2013, Using a Composite Collector in InGaAs-based HBTs Containing Sb, International Electron Devices and Materials Symposium (IEDMS) 2013, 2013/11/28-29, 國立暨南大學, 南投縣埔里.
- 張彥華, 2013, Simulation of Self-heating Effects on Heterojunction Bipolar Transistors, IEEE 2nd International Symposium on Next-Generation Electronics (ISNE), 2013/02/25-26, 義守大學, Kaohsiung, pp.383-385.
- 張彥華, 2012, Electrical Characteristics of Zr/HfAlO High-K Gate Dielectric, International Electron Devices and Materials Symposium 2012, 2012/11/29-30, 義守大學, 高雄市,義守大學.
- 張彥華, 2012, Electrical Characterization of Ultra Thin HfO2/Al2O3/HfO2 Triple-Layer Gate Dielectrics for Advanced MIS Capacitors, The 11th International Conference on Solid-State and Integrated-Circuit Technology, 2012/10/29-2012/11/01, 上海復旦大學, 西安, pp.S29_03.
- 張彥華, 2011, A Physics-Based Collector Current Model for InGaAsSb Heterojunction Bipolar Transistors, 2011 International Electron Devices and Materials Symposia (IEDMS), 2011/11/17-18, 台灣科技大學, 台北市.
- 張彥華, 2010, Extraction of Bias-Dependent Source and Drain Resistance for Compact Modeling in MOSFETs, International Electron Devices and Materials Symposium (IEDMS), 2010/11/18-19, 中央大學, 中壢.
- 張彥華, 2010, A New Extraction Method for Source/Drain Resistance, International Conference on Solid-State and Integrated Circuit Technology, 2010/11/01-04, 上海復旦大學, 上海, P14_24.
- 張彥華, 2009, TDDB Reliability of HfSiOx High-k Gate Dielectric with Post N2 RTA Treatment, 2009 IEDMS, 2009/11/19-20, 台灣電子材料與元件協會, 桃園長庚大學, pp.GC-18.
- 張彥華, 2009, 不同緩衝層MgO 膜厚在退火條件下對水平式磁穿隧接面結構之影響, 2009第五屆台灣自旋電子學國際學術研討會, 2009/09/09-11, 國立雲林科技大學、國立中正大學、國立彰化師範大學、國立師範大學, 台中僑光科技大學, pp.C-2-2.
- 張彥華, 2009, Effect of the annealing and the barrier-layer thickness on the magnetic properties in MgO-barrier-based magnetic tunnel junctions, 2009年磁性技術協會年會暨第21屆磁性技術研討會, 2009/06/24-26, 台灣磁性技術協會, 高雄中山大學, pp.TP-12.
- 張彥華, 2009, Calculation of microwave surface impedance for the superconducting film layered structure, 25th PIERS (Progress In Electromagnetic Research Symposium), 2009/03/23-27, PIERS, 北京, pp.86.
- 張彥華, 2008, Parameter Extraction of Equivalent Circuit Model on In0.4Ga0.6As0.8Sb0.2 Heterojunction Bipolar Transistors, 2008 International Electron Devices and Materials Symposia (IEDMS), 2008/11/28-29, 中興大學, 台中,中興大學.
- 張彥華, 2008, A Simple Procedure to Determine Source/Drain Series Resistance and Effective Channel Length for Advanced MOSFETs, The 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008/10/20-23, IEEE Beijing Section, Peking University, 北京.
- 張彥華, 2008, 模擬雙通道高電子遷移率電晶體於不同結構之電性分析, 2008第六屆微電子技術發展與應用研討會(2008 CMETA), 2008/05/16, 國立高雄海洋科技大學、日月光半導體, 高雄.
- 張彥華, 2007, A Simple Method to Extract Source/Drain Series Resistance for Advanced MOSFETs, 2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007/12/20-22, 台南, IC-5.
- 張彥華, 2007, Analysis of an EEHEMT Model for InP pHEMTs, 2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007/12/20-22, 台南, OE03.
- 張彥華, 2007, Simulation of High Brightness on Transflective LCD with Micro Cylindrical Lens Array, The 14th International Display Workshops, 2007/12/05-07, 札幌, pp.1539-1541.
- 張彥華, 2007, Determination of Early Effect, Self-Heating, and Avalanche Effects in InP/InGaAs/InP, 2007 International Electron Devices and Materials Symposia, 2007/11/30-2007/12/01, 新竹, 清華大學, PB7. (NSC 94-2215-E-224-010)
- 張彥華, 2007, Perpendicular magnetic anisotropy energy constant study for various MgO thickness of tunneling junction (Co/Pd)n/MgO/(Co/Pt)n, International Symposium on Advanced Magnetic Materials and Applications, 2007/05/28-2007/06/01, 濟州島, RB07.
- Yang-Hua Chang*, Yu-Fong Wu, and Yi-Ling Lin, 2006, Extraction of RSD and DL in Deep-Submicrometer MOSFETs, 2006 International Electron Devices and Materials Symposia (IEDMS), 2006/12/07-08, 台南, pp.352-353.
- Yang-Hua Chang* and Yi-Ling Lin, 2006, Extraction of RSD and DL in Deep-Submicrometer MOSFETs, 8th International Conference on Solid-State and Integrated-Circuit Technology, 2006/10/23-26, 上海, pp.200-202.
- Yang-Hua Chang, Zhi-Juan Chang, and Hui-Feng Hsu, 2005, Extraction of Early Voltage and Thermal Resistance in InP/InGaAs HBTs, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, 2005/12/19-21, Hong Kong, pp.787.
- Ching-Sung Ho*, Juin J. Liu, Hsin-Lin Lo, Yang-Hua Chang, Cospy Chang, and Kelly Yu, 2004, Compact Modeling for Drain Current of Short-Channel MOSFETs Including Source-Drain Resistance Effect, International Conference on Solid-State & Integrated Circuits Technology, 2004/10/18-21, 北京, pp.930-934.
- Yang-Hua Chang and Yi-Jing Hsieh, 2004, Substrate Parasitic Current in InGaP/GaAs HBTs, 2004 International Conference on Solid State Devices and Materials (SSDM), 2004/09/15-17, Tokyo, pp. 104.
- Yang-Hua Chang and Shiuan-Ching Li, 2003, Temperature Distribution of HBTs with the Effect of Heat Sink, 2003 IEEE Conference on Electron Devices and Solid-State Circuits, 2003/12/16-18, Hong Kong, pp.375.
- Yang-Hua Chang, Hsiao-Ching Chuang, Po-Chun Chang, and Juin-Yi Chen, 2003, AC Parameter Extraction of VBIC Model for InGaP/GaAs HBT, 2003 Asia-Pacific Microwave Conference, 2003/11/04-07, Seoul, pp. 1414.
- Yang-Hua Chang and Hsiao-Ching Chuang, 2003, Temperature Mapping of VBIC Model for InGaP/GaAs HBTs, 2003 Asia-Pacific Microwave Conference, 2003/11/04-07, Seoul, pp. 202.
- Yang-Hua Chang, Juin-Yi Chen, and Hsiao-Ching Chuang, 2002, Parameter Extraction of VBIC Model for InGaP/GaAs HBTs with Temperature Mapping and Substrate Parasitic Current, 2002 International Electron Devices and Materials Symposium, 2002/12/20-21, Taipei, pp. 318.
- Yang-Hua Chang, Hsiao-Ching Chuang, Yi-Jing Hsieh, and Juin-Yi Chen, 2002, Measurement and Simulation of Substrate Current in InGap/GaAs Heterojunction Bipolar Transistors, 2002 International Electron Devices and Materials Symposium, 2002/12/20-21, Taipei, pp. 324.
- Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, and Chi-Chung Liu, 2002, Design of Multi-finger HBTs with a Thermal Electrical Model, 2002 IEEE Hong Kong Electron Devices Meeting, 2002/06/22, Hong Kong.
- Yang-Hua Chang, Ching-Sung Ho, Wen-Tui Liao, and Chung-Che Liu, 2001, A Drain Current Model for MOSFETs with Pocket Implantation, 2001 IEEE Hong Kong Electron Devices Meeting, 2001/06/30, Hong Kong, pp. 42-45.
- Yang-Hua Chang and Ying-Yih Wu, 2000, Measurement of Junction Temperature in Heterojunction Bipolar Transistors, 2000 IEEE Third International Caracas Conference on Devices,Circuits and Systems, 2000/03/15-17, Cancun.
- Yang-Hua Chang, Ying-Yih Wu, and J. -M. Lu, 1999, Calculation of Junction Temperature in Heterojunction Bipolar Transistors, 1999 IEEE Hong Kong Electron Devices Meeting, Hong Kong, pp. 110-112.
- Yang-Hua Chang, Yueh-Cheng Lee, and Chi-Chung Liu, 1998, Design of Power AlGaAs/GaAs HBTs with a Thermal-electrical Model, 1998 International Electron Devices and Materials Symposium, BP-3-pp. 196.
- Yang-Hua Chang, Yueh-Cheng Lee, and Chi-Chung Liu, 1998, Design of Multi-finger AlGaAs/GaAs HBTs with Non-uniform Spacing, 1998 IEEE Hong Kong Electron Devices Meeting, Hong Kong, pp. 78-81.
- Yang-Hua Chang, 1997, Multi-finger AlGaAs/GaAs HBTs with Non-uniform Spacing, 1997 Electron Devices and Materials Symposium, pp. 196.
- Yang-Hua Chang and Cheng-Li Lin, 1995, A Comprehensive Study on Base Layer Design in AlGaAs/GaAs Heterojunction Bipolar Transistors, National Electron Devices and Materials Symposium.
- Yang-Hua Chang, 1992, A Simple Sub-threshold Model for Floating Body SOI MOSFETs, 5th International Symposium on Silicon-on-Insulator Technology and Devices.
- Yang-Hua Chang, 1991, On the Investigation of Degradation Mechanisms in Ultra-High Performance GaAs Heterojunction Bipolar Transistors, IEEE 49th Annual Device Rescarch Conference, Colorado.
三、其他論著- 張彥華, 1996, AlGaAs/GaAs 異質接面電晶體在高功率應用上之設計, 行政院國科會專題研究計晝成果報告, NSC 85-2215-E-224-006. (執行期間:執行期間: 84 年 8 月 1 日至 85 年 7 月 31 日)
- 張彥華, 1995, AlGaAs/GaAs 異質接合電晶體之模擬特性分析及製程之研究, 行政院國科會專題研究計畫成果報告.
- Chang, Yang-Hua, 1993, Current Degradation in AlGaAs/GaAs Heterojunction Bipolar Transistors, Ph. D. Dissertation, University of California,Irvine.
- Chang, Yang-Hua, 1993, Base Current Stability in AlGaAs/GaAs Heterojunction Bipolar Transistors, Report for the Microelectronics Innovation and Computer Research Opportunities Program, University of California.
- Chang, Yang-Hua, 1992, The Cascaded Collector Current Formulations in AlGaAs/GaAs HBT, Report for the Microelectronics Innovation and Computer Research Opportunities Program, University of California.
- Chang, Yang-Hua, 1991, Resolving Degradation Mechanisms in Be-doped Heterojunction Bipolar Transistors, Report for the Microelectronics Innovation and Computer Research Opportunities Program, University of California.
- Chang, Yang-Hua, 1991, On the Investigation of Current Gain Dependence Mechanisms in AlGaAs/GaAs Heterojunction Bipolar Transistors, Master Thesis, University of California,Irvine.
- Chang, Yang-Hua, 1990, An Investigation of Degradation in Ultra-High Performandce GaAs Heterojunction Bipolar Transistors, Report for the Microelectronics Inovation and Computer Research Opportunities Program, University of California.
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