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陳世志老師的論文著述

一、學術期刊論文

  1. 陳世志, 2010, Improvement of Poly-Pimple-Induceed Device Mismatch on 6T-SRAM at 65-nm CMOS Technology, A PUBLICATION OF THE IEEE ELECTRON DEVICES SOCIETY, Vol.57, No.4, pp.956. (SCI)
  2. 陳世志, 2010, Ultrathin DPN STI SiON liner for 40 nm low-power CMOS technology, Solid-State Electronics. (SCI)
  3. 陳世志, 2010, Improvement of Poly-Pimple-Induced Device Mismatch on 6T-SRAM at 65-nm CMOS Technology, IEEE. (SCI)
  4. 陳世志, 2007, Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various RF powers, J. Vacuum Sci, Vol.25, No.4, pp.1298-1304. (SCI, EI)
  5. 陳世志, 2006, SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells", Solar Energy, IEEE, Vol.80, No.2, pp.215-219. (SCI, EI)
  6. 陳世志, 2006, GaN MSM UV photodetectors with titanium tungsten transparent electrodes, IEEE, Vol.5, No.3, pp.38-42. (SCI, EI)
  7. 陳世志, 2005, In0.37Ga0.63Nmetal-semiconductor-metal photodetectors with recessed electrodes, IEEE, Vol.17, No.4. (SCI, EI)
  8. 陳世志, 2005, InGaN-GaN MQW LEDs with Si treatment, IEEE, Vol.17, No.8. (SCI, EI)
  9. 陳世志, 2003, Growth of nanoscale InGaN self-assembled quantum dots and their room-temperature photoluminescence, Crystal Growth, Vol.249, No.1, pp.44-148. (SCI, EI)
  10. 陳世志, 2003, Improved ESD protection by combining InGaN/GaN MQW LED with GaN Schottky diode, IEEE, Vol.24, No.3, pp.129-131. (SCI, EI)
  11. 陳世志, 2003, InGaN/GaN light emitting diodes with ITO p-contact layers prepared by RF sputterin, Semicond. Sci. Technol, Vol.18, No.4, pp.L21-L23. (SCI, EI)
  12. 陳世志, 2003, InGaN/GaN light emitting diodes with Ni/Au,Ni/ITO and ITO p-type contacts, Solid State Electron, Vol.47, No.5, pp.849-853. (SCI, EI)
  13. 陳世志, 2003, Nitride-based near ultraviolet multiple quantum well light emitting diodes with AlGaN barrier layers, J. Electron. Mater.,, Vol.32, No.5, pp.415-418. (SCI, EI)
  14. 陳世志, 2003, InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer, IEEE, Vol.32, No.5, pp.411-414. (SCI, EI)
  15. 陳世志, 2002, Be diffusion in GaN, Mater. Charact, Vol.49, No.4, pp.337-341. (SCI, EI)
  16. 陳世志, 2002, Nitride-based light emitting diodes with Ni/ITO p-type ohmic contacts, IEEE, Vol.14, No.12, pp.1668-1670. (SCI, EI)
  17. Chen, S.C., Y.K. Su, and C.Z. Lee, 1992, Collector-emitter offsetvoltage in single and double-base InGaAs(P)/InP heterojunction bipolar transistors, Solid-State Electronics, Vol. 35, pp. 553-560.
  18. Chen, S.C., Y.K. Su, and C.Z. Lee, 1992, A study of current transport in p-N heterojunctions, Solid-State Electronics, Vol. 35, pp. 1311-1323.
  19. Chen, S.C., Y.K. Su, and C.Z. Lee, 1991, The fabrication and study of InGaAsP/InP double-collector heterojunction bipolar transistors, Solid-State Electronics, Vol. 34, pp. 787-794.
  20. Y.K. Su, Chen, S.C., and F.S. Juang, 1989, Effect of composition and growth condition on the properties of Alx Ga1-x Sb epilayers, Solid-State Electronics, Vol. 32, pp. 733-738.
  21. Chen, S.C. and Y.K. Su, 1989, Photoluminescence study of gallium antimonide grown by liquid-phase epitaxy, J. Appl. Phys., Vol. 66, pp. 350-353.
  22. B.D. Liu, Y.K. Su, and Chen, S.C., 1989, Ion-sensitive fieldeffect transistor with silicon nitride gate for pH sensing, Int. J. Electronic, Vol. 67, pp. 59-63.
  23. Y.K. Su, T.A. Dai, and Chen, S.C., 1988, Effect of the InP doping density on the electrical properties of the two-dimensional electron gas in LPE-grown modulation doped heterostructures, Solid-State Electronics, Vol. 31, pp. 935-958.
  24. Chen, S.C., Y.K. Su, and F.S. Juang, 1988, Characterization and growth of Al Ga0.065Sb0.0935 by liguid phase epitaxy, J. Crystal Growth, Vol. 92, pp. 118-122.
  25. Chen, S.C., Y.K. Su, and J.S. Tzeng, 1986, The fabrication and Characterization of ion-sensitive field-effect transistors with a sillicon dioxide gate, J. Phys., Vol. 19, pp. 1951-1956.
二、研討會論文
  1. 陳世志, 2017, Enhanced SnO2 sensing performance of VOCs by coating metal nanoparticles catalytic, 2017奈米元件技術研討會, 2017/04/28, 財團法人國家實驗研究院國家奈米元件實驗室, 新竹市,財團法人國家實驗研究院國家奈米元件實驗室.
  2. 陳世志, 2017, The Study of Hydrogenated Microcrystal Silicon Films by RF Magnetron Sputter, 2017 International Forum on Advancrd Technologies, 2017/03/09-11, 國立台灣科技大學, 花蓮縣, pp.139~142.
  3. 陳世志, 2017, A Study on ARC Graded Layer structure SiO2/SiOxNy/SiNx/Si For Si Based Solar Cells Applications, 2017 International Forum on Advancrd Technologies, 2017/03/09-11, 國立台灣科技大學, 花蓮縣, pp.143~146.
  4. 陳世志, 2017, An Investigation on HfO2 Crystal Phases by RF-Sputter and Cap-PDA for High Dielectric, 2017 International Forum on Advancrd Technologies, 2017/03/09-11, 國立台灣科技大學, 花蓮縣, pp.147~151.
  5. 陳世志, 2017, Enhanced SnO2 sensing performance of VOCs by Au nanoparticles catalytic, ISPlasma, 2017/03/01-05, CHUBU UNIVERSITY, Aichi,CHUBU UNIVERSITY, pp.86.
  6. 陳世志, 2014, Fabrication of ITO/SiO2 thin films for Crystalline Silicon solar cell, The 7th Electronic Technology Symposium(ETS), 2014/05/23, 義守大學電子工程學系, 高雄市,義守大學.
  7. 陳世志, 2014, 以射頻磁控濺鍍成長多層鉿鈦氧氮薄膜結構之研究, 2014第十二屆微電子技術發展與應用研討會, 2014/05/23, 國立高雄海洋科技大學, 高雄市,海科大.
  8. 陳世志, 2014, Non-Sulfurized CZTS(Cu2ZnSnS4) Compound Solar Cell by Non-Vacuum Chemical Bath Stacking Deposition Method, 奈米元件技術研討會 第21屆(Symposium on Nano Device Technology), 2014/05/01-02, 國家實驗研究院 國家奈米元件實驗室, 新竹市 國立交通大學.
  9. 陳世志, 2014, Non-Sulfurized CZTSSe(Cu2ZnSn(S,Se)4) Thin Film Developed by Chemical Bath Deposition, ISPlasma 2014, 2014/03/02-06, The Japan Society of Applied Physics & ISPlasma2014/IC-PLANTS2014 Organizing Com, Meijo University, Nagoya, Japan.
  10. 陳世志, 2009, 以金屬誘發結晶法研製太陽能電池之低溫多晶矽薄膜, 2009中華民國物理暨研究成果發表會, 2009/01/19-21, 彰化縣,彰化師範大學 進德校區, p.117.
  11. 陳世志, 2009, 場效電晶體之閘極介電層(金屬/氧化鉿/矽)製作與電性分析, 2009中華民國物理年會暨研究成果發表會, 2009/01/19-21, 彰化縣,彰化師範大學進德校區, p.117.
  12. 陳世志, 2008, 以金屬感應結晶法研製應用於太陽能電池之低溫多晶矽薄膜, 2008第六屆微電子技術發展與應用研討會, 2008/05/16, 高雄市,國立高雄海洋科技大學, p.79.
  13. 陳世志, 2008, 場效應電晶體之閘極介電層(金屬/氧化鋯/矽)製作與電性分析, 2008第六屆微電子技術發展與研討會, 2008/05/16, 高雄市,國立高雄海洋科技大學, p.81.
  14. T.L. Chen, Y.K. Su, and S.C. Chen, 1999, 1.2 um InGaAsP/InP buried crescent heterostructure laser diodes grown by liquid phase epitaxy, Proc. of Electron Devices and Materials Symposium, pp. 1-4.
  15. F.S. Juang, Y.K. Su, and S.C. Chen, 1999, The study electric characteristics of Al/nGaSb contact, Proc. of The Annual Conference of the Chinese Society for Materials Science, pp. 1105-1109.
  16. 魯曉忠, 陳世志, 1998, 1550nm/1650/nm 光纖濾波器之模擬與研製, 1998 年尖端材料及製造科技學術研討會, pp. 86-92.
  17. 黃安琪, 陳世志, 張守進, 1998, 以濺鍍法成長氧化鈦薄膜之介電特性, 第 13 屆全國技術及職業教育研討會(論文集), pp. 203-208.
  18. 陳發明, 陳世志, 1998, 1.55um/1.65um 全介質 Fabry-Perot 光學干涉瀘鏡之設計, 第 13 屆全國技術及職業教育研討會(論文集), pp. 97-104.
  19. 陳世志, 何源展, 1998, Simulation on the Space-Charge region Recombination in HBTs Based on the Scattering Matrix Method, 1998 物理年會.
  20. 胡展源, 陳世志, 1998, 濺鍍法鈮酸鋰高介電簿膜之研究, 1998 年尖端材料及製造科技學術研討會, pp. 100-106.
  21. 何源展, 陳世志, 蘇炎坤, 1998, 運用數值模擬空去區復合電流完成磷化銦/砷化鎵異質接面電晶體的最佳化設計, 第 13 屆全國技術及職教育研討會(論文集), pp. 429-438.
  22. Shih-Chih Chen and Yuan-Jan Her, 1998, The effect of rocombination on the I/V Characteristics of InGaP/GaAs heterojunction bipolar tramsistors, IEDMS.
  23. Fa-Ming Chen and Shih-Chih Chen, 1998, Computer Simulation of 1.55um Multilayer Thin-Films Optical Filters, 1998 Taipei International Symposium on Surfaces and Thin Films..
  24. An-Chi Huang, Shih-Chih Chen, and Shou-Chin Chang, 1998, Electrical Characteristics of RF Magnetron Sputter Deposited Lithium Niobate Thin Films, 1998 Taipei International Symposium on Surfaces and Thin Films.
  25. An-Chi Huang, Shih-Chih Chen, and Shou-Chin Chang, 1998, Electrical Characteristics of RF Magnetron Sputter Deposited Lithium Niobate Thin Films, 1998 Taipei International Symposium on Surfaces and Thin Films.
  26. 陳世志, 葉長茂, 張守進, 橫山明聰, 1997, An Investigation of High Dielectric Constant of RF-Suttered HfO2 Thin Films, EDMS.
  27. 林嘉卿, 陳發明, 陳世志, 1997, 1310nm/(1625nm or 1650nm) 之 Fabry-Perot 光纖瀘波器的設計與製作, 1997 台灣光電科技研討會(論文集), pp. 244-2546.
  28. S.C. Chen and Y.K. Su, 1991, Fabrication of InGaAs(P)/InP heterojunction bipolar transistors, ibid, pp. 452-457.
  29. Y.K. Su, S.C. Chen, and G.S. Yeh, 1989, The fabrication of InP/InGaAsP/InP double heterojunction bipolar transistors, 1989 Electron Devices and Materials Circuit Technology Symposium, pp. 448-453.
  30. S.C. Chen, Y.K. Su, and F.S. Juang, 1989, Properties of GaAISb epilayer grown by liquid phase epitaxy, Proc. of the 1989 Annual Conference of the Chinese Society for Materials Science.
  31. Y.K. Su, T.A. Dai, and S.C. Chen, 1987, InGaAsP/InP modulationdoped heterostructure grown by LPE, Proc. of 10th Chemical Vapor Deposition, Honolulu,Hawaii, pp. 577c.
  32. A Dai, Y.K. Su, and S.C. Chen, 1987, InGaAsP/InP modulationdoped heterostructure grown by liquid phase epitaxy, Proc. of Electron Devices and Materials Symposium, pp. 16-19.
  33. Y.K. Su, S.C. Chen, and J.S. Tzeng, 1985, Simulation anlysis of ion-sensitive field-effect transistors, International Conference Modeling a Simulation, Gorakhpur.
  34. K. Su, S.C. Chen, and J.S. Tzeng, 1985, Ion-sensitive field-effect transistors with a silicon nitride gate for PH sensing, Proc. of Electronic Devices and Materials Symposium, pp. 45-48.
 
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