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陳世志老師的論文著述 一、學術期刊論文 - 陳世志, 2010, Improvement of Poly-Pimple-Induceed Device Mismatch on 6T-SRAM at 65-nm CMOS Technology, A PUBLICATION OF THE IEEE ELECTRON DEVICES SOCIETY, Vol.57, No.4, pp.956. (SCI)
- 陳世志, 2010, Ultrathin DPN STI SiON liner for 40 nm low-power CMOS technology, Solid-State Electronics. (SCI)
- 陳世志, 2010, Improvement of Poly-Pimple-Induced Device Mismatch on 6T-SRAM at 65-nm CMOS Technology, IEEE. (SCI)
- 陳世志, 2007, Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared with various RF powers, J. Vacuum Sci, Vol.25, No.4, pp.1298-1304. (SCI, EI)
- 陳世志, 2006, SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells", Solar Energy, IEEE, Vol.80, No.2, pp.215-219. (SCI, EI)
- 陳世志, 2006, GaN MSM UV photodetectors with titanium tungsten transparent electrodes, IEEE, Vol.5, No.3, pp.38-42. (SCI, EI)
- 陳世志, 2005, In0.37Ga0.63Nmetal-semiconductor-metal photodetectors with recessed electrodes, IEEE, Vol.17, No.4. (SCI, EI)
- 陳世志, 2005, InGaN-GaN MQW LEDs with Si treatment, IEEE, Vol.17, No.8. (SCI, EI)
- 陳世志, 2003, Growth of nanoscale InGaN self-assembled quantum dots and their room-temperature photoluminescence, Crystal Growth, Vol.249, No.1, pp.44-148. (SCI, EI)
- 陳世志, 2003, Improved ESD protection by combining InGaN/GaN MQW LED with GaN Schottky diode, IEEE, Vol.24, No.3, pp.129-131. (SCI, EI)
- 陳世志, 2003, InGaN/GaN light emitting diodes with ITO p-contact layers prepared by RF sputterin, Semicond. Sci. Technol, Vol.18, No.4, pp.L21-L23. (SCI, EI)
- 陳世志, 2003, InGaN/GaN light emitting diodes with Ni/Au,Ni/ITO and ITO p-type contacts, Solid State Electron, Vol.47, No.5, pp.849-853. (SCI, EI)
- 陳世志, 2003, Nitride-based near ultraviolet multiple quantum well light emitting diodes with AlGaN barrier layers, J. Electron. Mater.,, Vol.32, No.5, pp.415-418. (SCI, EI)
- 陳世志, 2003, InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer, IEEE, Vol.32, No.5, pp.411-414. (SCI, EI)
- 陳世志, 2002, Be diffusion in GaN, Mater. Charact, Vol.49, No.4, pp.337-341. (SCI, EI)
- 陳世志, 2002, Nitride-based light emitting diodes with Ni/ITO p-type ohmic contacts, IEEE, Vol.14, No.12, pp.1668-1670. (SCI, EI)
- Chen, S.C., Y.K. Su, and C.Z. Lee, 1992, Collector-emitter offsetvoltage in single and double-base InGaAs(P)/InP heterojunction bipolar transistors, Solid-State Electronics, Vol. 35, pp. 553-560.
- Chen, S.C., Y.K. Su, and C.Z. Lee, 1992, A study of current transport in p-N heterojunctions, Solid-State Electronics, Vol. 35, pp. 1311-1323.
- Chen, S.C., Y.K. Su, and C.Z. Lee, 1991, The fabrication and study of InGaAsP/InP double-collector heterojunction bipolar transistors, Solid-State Electronics, Vol. 34, pp. 787-794.
- Y.K. Su, Chen, S.C., and F.S. Juang, 1989, Effect of composition and growth condition on the properties of Alx Ga1-x Sb epilayers, Solid-State Electronics, Vol. 32, pp. 733-738.
- Chen, S.C. and Y.K. Su, 1989, Photoluminescence study of gallium antimonide grown by liquid-phase epitaxy, J. Appl. Phys., Vol. 66, pp. 350-353.
- B.D. Liu, Y.K. Su, and Chen, S.C., 1989, Ion-sensitive fieldeffect transistor with silicon nitride gate for pH sensing, Int. J. Electronic, Vol. 67, pp. 59-63.
- Y.K. Su, T.A. Dai, and Chen, S.C., 1988, Effect of the InP doping density on the electrical properties of the two-dimensional electron gas in LPE-grown modulation doped heterostructures, Solid-State Electronics, Vol. 31, pp. 935-958.
- Chen, S.C., Y.K. Su, and F.S. Juang, 1988, Characterization and growth of Al Ga0.065Sb0.0935 by liguid phase epitaxy, J. Crystal Growth, Vol. 92, pp. 118-122.
- Chen, S.C., Y.K. Su, and J.S. Tzeng, 1986, The fabrication and Characterization of ion-sensitive field-effect transistors with a sillicon dioxide gate, J. Phys., Vol. 19, pp. 1951-1956.
二、研討會論文- 陳世志, 2018, 以磁控濺鍍與cap-PDA對高介電二氧化鉿晶相之研究, 中華民國物理年會, 2018/01/14-16, 中華民國物理年會, 台北市,台灣大學.
- 陳世志, 2017, Enhanced SnO2 sensing performance of VOCs by coating metal nanoparticles catalytic, 2017奈米元件技術研討會, 2017/04/28, 財團法人國家實驗研究院國家奈米元件實驗室, 新竹市,財團法人國家實驗研究院國家奈米元件實驗室.
- 陳世志, 2017, The Study of Hydrogenated Microcrystal Silicon Films by RF Magnetron Sputter, 2017 International Forum on Advancrd Technologies, 2017/03/09-11, 國立台灣科技大學, 花蓮縣, pp.139~142.
- 陳世志, 2017, A Study on ARC Graded Layer structure SiO2/SiOxNy/SiNx/Si For Si Based Solar Cells Applications, 2017 International Forum on Advancrd Technologies, 2017/03/09-11, 國立台灣科技大學, 花蓮縣, pp.143~146.
- 陳世志, 2017, An Investigation on HfO2 Crystal Phases by RF-Sputter and Cap-PDA for High Dielectric, 2017 International Forum on Advancrd Technologies, 2017/03/09-11, 國立台灣科技大學, 花蓮縣, pp.147~151.
- 陳世志, 2017, Enhanced SnO2 sensing performance of VOCs by Au nanoparticles catalytic, ISPlasma, 2017/03/01-05, CHUBU UNIVERSITY, Aichi,CHUBU UNIVERSITY, pp.86.
- 陳世志, 2014, Fabrication of ITO/SiO2 thin films for Crystalline Silicon solar cell, The 7th Electronic Technology Symposium(ETS), 2014/05/23, 義守大學電子工程學系, 高雄市,義守大學.
- 陳世志, 2014, 以射頻磁控濺鍍成長多層鉿鈦氧氮薄膜結構之研究, 2014第十二屆微電子技術發展與應用研討會, 2014/05/23, 國立高雄海洋科技大學, 高雄市,海科大.
- 陳世志, 2014, Non-Sulfurized CZTS(Cu2ZnSnS4) Compound Solar Cell by Non-Vacuum Chemical Bath Stacking Deposition Method, 奈米元件技術研討會 第21屆(Symposium on Nano Device Technology), 2014/05/01-02, 國家實驗研究院 國家奈米元件實驗室, 新竹市 國立交通大學.
- 陳世志, 2014, Non-Sulfurized CZTSSe(Cu2ZnSn(S,Se)4) Thin Film Developed by Chemical Bath Deposition, ISPlasma 2014, 2014/03/02-06, The Japan Society of Applied Physics & ISPlasma2014/IC-PLANTS2014 Organizing Com, Meijo University, Nagoya, Japan.
- 陳世志, 2009, 以金屬誘發結晶法研製太陽能電池之低溫多晶矽薄膜, 2009中華民國物理暨研究成果發表會, 2009/01/19-21, 彰化縣,彰化師範大學 進德校區, p.117.
- 陳世志, 2009, 場效電晶體之閘極介電層(金屬/氧化鉿/矽)製作與電性分析, 2009中華民國物理年會暨研究成果發表會, 2009/01/19-21, 彰化縣,彰化師範大學進德校區, p.117.
- 陳世志, 2008, 以金屬感應結晶法研製應用於太陽能電池之低溫多晶矽薄膜, 2008第六屆微電子技術發展與應用研討會, 2008/05/16, 高雄市,國立高雄海洋科技大學, p.79.
- 陳世志, 2008, 場效應電晶體之閘極介電層(金屬/氧化鋯/矽)製作與電性分析, 2008第六屆微電子技術發展與研討會, 2008/05/16, 高雄市,國立高雄海洋科技大學, p.81.
- T.L. Chen, Y.K. Su, and S.C. Chen, 1999, 1.2 um InGaAsP/InP buried crescent heterostructure laser diodes grown by liquid phase epitaxy, Proc. of Electron Devices and Materials Symposium, pp. 1-4.
- F.S. Juang, Y.K. Su, and S.C. Chen, 1999, The study electric characteristics of Al/nGaSb contact, Proc. of The Annual Conference of the Chinese Society for Materials Science, pp. 1105-1109.
- 魯曉忠, 陳世志, 1998, 1550nm/1650/nm 光纖濾波器之模擬與研製, 1998 年尖端材料及製造科技學術研討會, pp. 86-92.
- 黃安琪, 陳世志, 張守進, 1998, 以濺鍍法成長氧化鈦薄膜之介電特性, 第 13 屆全國技術及職業教育研討會(論文集), pp. 203-208.
- 陳發明, 陳世志, 1998, 1.55um/1.65um 全介質 Fabry-Perot 光學干涉瀘鏡之設計, 第 13 屆全國技術及職業教育研討會(論文集), pp. 97-104.
- 陳世志, 何源展, 1998, Simulation on the Space-Charge region Recombination in HBTs Based on the Scattering Matrix Method, 1998 物理年會.
- 胡展源, 陳世志, 1998, 濺鍍法鈮酸鋰高介電簿膜之研究, 1998 年尖端材料及製造科技學術研討會, pp. 100-106.
- 何源展, 陳世志, 蘇炎坤, 1998, 運用數值模擬空去區復合電流完成磷化銦/砷化鎵異質接面電晶體的最佳化設計, 第 13 屆全國技術及職教育研討會(論文集), pp. 429-438.
- Shih-Chih Chen and Yuan-Jan Her, 1998, The effect of rocombination on the I/V Characteristics of InGaP/GaAs heterojunction bipolar tramsistors, IEDMS.
- Fa-Ming Chen and Shih-Chih Chen, 1998, Computer Simulation of 1.55um Multilayer Thin-Films Optical Filters, 1998 Taipei International Symposium on Surfaces and Thin Films..
- An-Chi Huang, Shih-Chih Chen, and Shou-Chin Chang, 1998, Electrical Characteristics of RF Magnetron Sputter Deposited Lithium Niobate Thin Films, 1998 Taipei International Symposium on Surfaces and Thin Films.
- An-Chi Huang, Shih-Chih Chen, and Shou-Chin Chang, 1998, Electrical Characteristics of RF Magnetron Sputter Deposited Lithium Niobate Thin Films, 1998 Taipei International Symposium on Surfaces and Thin Films.
- 陳世志, 葉長茂, 張守進, 橫山明聰, 1997, An Investigation of High Dielectric Constant of RF-Suttered HfO2 Thin Films, EDMS.
- 林嘉卿, 陳發明, 陳世志, 1997, 1310nm/(1625nm or 1650nm) 之 Fabry-Perot 光纖瀘波器的設計與製作, 1997 台灣光電科技研討會(論文集), pp. 244-2546.
- S.C. Chen and Y.K. Su, 1991, Fabrication of InGaAs(P)/InP heterojunction bipolar transistors, ibid, pp. 452-457.
- Y.K. Su, S.C. Chen, and G.S. Yeh, 1989, The fabrication of InP/InGaAsP/InP double heterojunction bipolar transistors, 1989 Electron Devices and Materials Circuit Technology Symposium, pp. 448-453.
- S.C. Chen, Y.K. Su, and F.S. Juang, 1989, Properties of GaAISb epilayer grown by liquid phase epitaxy, Proc. of the 1989 Annual Conference of the Chinese Society for Materials Science.
- Y.K. Su, T.A. Dai, and S.C. Chen, 1987, InGaAsP/InP modulationdoped heterostructure grown by LPE, Proc. of 10th Chemical Vapor Deposition, Honolulu,Hawaii, pp. 577c.
- A Dai, Y.K. Su, and S.C. Chen, 1987, InGaAsP/InP modulationdoped heterostructure grown by liquid phase epitaxy, Proc. of Electron Devices and Materials Symposium, pp. 16-19.
- Y.K. Su, S.C. Chen, and J.S. Tzeng, 1985, Simulation anlysis of ion-sensitive field-effect transistors, International Conference Modeling a Simulation, Gorakhpur.
- K. Su, S.C. Chen, and J.S. Tzeng, 1985, Ion-sensitive field-effect transistors with a silicon nitride gate for PH sensing, Proc. of Electronic Devices and Materials Symposium, pp. 45-48.
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